Global Gallium Nitride Target Market Insights, Size, and Forecast By Application (Power Electronics, LEDs, RF Devices, Optoelectronics), By Material Type (Gallium Nitride, Silicon Carbide, Gallium Arsenide), By End Use Industry (Consumer Electronics, Telecommunications, Automotive, Aerospace), By Form Factor (Sublimated, Epitaxial, Bulk), By Region (North America, Europe, Asia-Pacific, Latin America, Middle East and Africa), Key Companies, Competitive Analysis, Trends, and Projections for 2026-2035
Key Market Insights
Global Gallium Nitride Target Market is projected to grow from USD 1.85 Billion in 2025 to USD 7.92 Billion by 2035, reflecting a compound annual growth rate of 14.2% from 2026 through 2035. The Gallium Nitride GaN target market encompasses the specialized high purity GaN materials used in sputtering processes to deposit thin films for various advanced electronic and optoelectronic devices. These targets are critical components in manufacturing high power, high frequency, and energy efficient semiconductors, supporting applications across power electronics, RF communications, and photonics. Key market drivers include the accelerating demand for energy efficient power management solutions in consumer electronics, electric vehicles, and industrial applications. The inherent advantages of GaN, such as superior electron mobility, higher breakdown voltage, and thermal stability compared to silicon, are propelling its adoption. Furthermore, the global rollout of 5G technology is a significant catalyst, as GaN based RF devices offer enhanced performance for base stations, amplifiers, and transceivers. The expansion of data centers and the increasing need for compact and efficient power supplies are also fueling market growth.
Global Gallium Nitride Target Market Value (USD Billion) Analysis, 2025-2035
2025 - 2035
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Important market trends include the continuous innovation in GaN device architectures, such as GaN on silicon (GaN on Si) and GaN on silicon carbide (GaN on SiC), aiming to reduce manufacturing costs and improve performance. There is a growing focus on developing larger diameter GaN targets to enable higher throughput and cost efficiencies in mass production. The rising adoption of GaN in LiDAR systems for autonomous vehicles and in advanced display technologies is another emerging trend. However, market restraints include the relatively high manufacturing cost of GaN targets and the technical complexities associated with depositing high quality GaN thin films. Supply chain vulnerabilities and the availability of high purity raw materials also pose challenges. Despite these hurdles, significant opportunities lie in the expansion of GaN into new applications such as satellite communications, aerospace and defense, and renewable energy infrastructure. The increasing investment in R&D by key players to overcome technical barriers and develop more cost effective manufacturing processes presents a fertile ground for market expansion.
Asia Pacific stands as the dominant region in the global Gallium Nitride Target Market, primarily due to the presence of a robust electronics manufacturing ecosystem, significant investments in 5G infrastructure, and the rapid growth of electric vehicle production. The region benefits from a large consumer electronics market and substantial government support for advanced material research and development. Concurrently, Asia Pacific is also the fastest growing region, driven by the escalating demand for GaN based devices in emerging economies, the expansion of local semiconductor fabrication facilities, and the rapid adoption of smart grid technologies. The Power Electronics segment leads the market, leveraging GaN's superior efficiency in applications such as AC DC converters, inverters, and motor drives, critical for reducing power losses and enabling smaller form factors. Key players like Toshiba, Osram Opto Semiconductors, Rohm Semiconductor, Hanergy Thin Film Power Group, Skyworks Solutions, Infineon Technologies, Cree, NXP Semiconductors, Broadcom, and Texas Instruments are strategically focusing on product innovation, capacity expansion, and forging partnerships to strengthen their market positions and cater to the evolving demands of various end user industries.
Quick Stats
Market Size (2025):
USD 1.85 BillionProjected Market Size (2035):
USD 7.92 BillionLeading Segment:
Power Electronics (42.5% Share)Dominant Region (2025):
Asia Pacific (58.2% Share)CAGR (2026-2035):
14.2%
What is Gallium Nitride Target?
A Gallium Nitride Target is a high purity, solid disc of Gallium Nitride used in physical vapor deposition processes, primarily sputtering. It serves as the source material for depositing thin films of Gallium Nitride onto substrates. This target is crucial for manufacturing GaN based electronic and optoelectronic devices, including high power transistors, RF amplifiers, and blue/UV LEDs. The precise stoichiometry and crystallographic quality of the target directly impact the performance and characteristics of the deposited GaN films. Its application enables the creation of devices that operate at higher frequencies and temperatures than traditional silicon based counterparts, driving advancements in 5G, electric vehicles, and power electronics.
What are the Trends in Global Gallium Nitride Target Market
Advanced PVD Sputtering for MicroLEDs Driving Demand
Automotive Power Electronics Fueling Target Innovations
5G Infrastructure Expansion Boosting GaN Target Adoption
High Purity GaN Targets for Next Gen RF Devices
Sustainable Manufacturing Practices in Target Production
Advanced PVD Sputtering for MicroLEDs Driving Demand
The miniaturization and improved performance of MicroLED displays are significantly boosting the demand for advanced PVD sputtering techniques. These displays require increasingly precise and uniform thin film deposition, which traditional sputtering methods struggle to achieve at the necessary scale and resolution. Gallium Nitride targets are crucial for depositing the active light emitting layers in MicroLEDs. The drive for higher resolution, increased brightness, and better color accuracy in these next generation displays directly translates into a need for more sophisticated sputtering processes utilizing high purity Gallium Nitride targets. This technological push in MicroLED manufacturing is a primary driver for growth in the global Gallium Nitride target market as manufacturers invest in upgrading their deposition capabilities.
Automotive Power Electronics Fueling Target Innovations
Automotive power electronics are driving significant innovation within the global Gallium Nitride target market. The demand for highly efficient and compact power solutions in electric vehicles is paramount. GaN based devices offer superior performance in terms of switching speed and power density compared to traditional silicon. This inherent advantage positions GaN as a critical material for next generation onboard chargers inverters and DC DC converters. Consequently manufacturers of GaN targets are actively developing advanced materials with enhanced purity and crystallization to meet the stringent reliability and performance requirements of the automotive sector. This focus on automotive applications is stimulating targeted research and development efforts leading to innovations in target manufacturing processes and material science specifically tailored for high power automotive electronics.
What are the Key Drivers Shaping the Global Gallium Nitride Target Market
Surging Demand for GaN-based Power Electronics
Rapid Expansion of 5G Infrastructure Deployment
Growing Adoption of GaN RF Devices in Aerospace and Defense
Advancements in GaN Technology and Manufacturing Processes
Increasing Demand for High-Performance Computing and Data Centers
Surging Demand for GaN-based Power Electronics
The surging demand for Gallium Nitride GaN based power electronics is a primary driver. GaN offers significant advantages over traditional silicon for power devices. Its superior electron mobility and breakdown electric field enable the creation of power electronics that are more efficient operate at higher frequencies and are physically smaller. This makes GaN ideal for a wide range of applications including power adapters for consumer electronics electric vehicle chargers and renewable energy inverters. As industries increasingly prioritize energy efficiency and compact designs the demand for these high performance GaN solutions continues to grow rapidly. This expanding adoption across diverse sectors is fueling the market for Gallium Nitride.
Rapid Expansion of 5G Infrastructure Deployment
The rapid expansion of 5G infrastructure deployment is a pivotal driver for the global gallium nitride target market. As telecommunication networks worldwide upgrade to 5G technology, there's an immense demand for new base stations, power amplifiers, and other high-frequency components. Gallium nitride GaN semiconductors are uniquely suited for these applications due to their superior power handling capability, high breakdown voltage, and excellent thermal conductivity compared to silicon. These properties enable GaN devices to operate efficiently at the higher frequencies and power levels required for 5G, leading to smaller, more efficient, and more reliable networking equipment. Consequently, manufacturers increasingly rely on gallium nitride targets as the foundational material for fabricating these essential GaN wafers and epitaxy layers, directly fueling the market's growth.
Growing Adoption of GaN RF Devices in Aerospace and Defense
The aerospace and defense sectors are increasingly embracing Gallium Nitride GaN RF devices due to their superior performance characteristics. GaN offers significant advantages over traditional silicon based technologies including higher power density, greater efficiency, and better thermal management. These properties are critical for applications such as radar systems, electronic warfare, and satellite communications where reliability and operational effectiveness are paramount. The ability of GaN devices to operate at higher frequencies and temperatures while maintaining a smaller footprint allows for more compact lighter and robust systems. This trend is driven by the need for enhanced detection capabilities improved signal processing and extended range in next generation defense and space technologies making GaN a vital material for advanced RF solutions.
Global Gallium Nitride Target Market Restraints
Supply Chain Vulnerability & Geopolitical Dependence
The global Gallium Nitride (GaN) target market faces significant restraint from supply chain vulnerability and geopolitical dependence. The production of GaN targets relies on a complex web of raw material extraction, processing, and manufacturing steps, often concentrated in specific regions. Disruptions to any part of this chain, such as export restrictions, trade disputes, or natural disasters, can sever access to crucial components. Furthermore, the specialized nature of GaN technology means a limited number of suppliers often dominate key segments. This reliance creates geopolitical leverage, allowing nations or blocs to influence market access and pricing. Such concentrated supply chains are susceptible to political tensions, resource nationalism, or even military conflicts, leading to price volatility, material shortages, and delays in product development and deployment for GaN target manufacturers worldwide.
High R&D Costs & Limited Investment Capital
Developing cutting-edge gallium nitride targets demands substantial upfront investment in research and development. This includes funding for materials science research, advanced manufacturing processes, and rigorous quality control testing. The specialized equipment required for these processes is also extremely expensive.
Companies operating in this niche market often face significant hurdles in securing sufficient investment capital. Smaller players, in particular, may struggle to attract the necessary funding to compete with larger, more established corporations. This creates a barrier to entry for new innovators and can stifle the overall pace of technological advancement. The long return on investment periods associated with highly specialized R&D further exacerbates this challenge, making it difficult to justify the substantial financial outlay. Consequently, high R&D costs coupled with limited investment capital significantly restrain market growth and innovation.
Global Gallium Nitride Target Market Opportunities
5G & EV Electrification Driving Demand for Advanced GaN Sputtering Targets
The convergence of global 5G network expansion and the accelerating electric vehicle electrification trend creates a significant opportunity for advanced Gallium Nitride sputtering targets. 5G infrastructure, including crucial base stations and high frequency communication modules, critically relies on GaN’s exceptional power efficiency and robust high frequency performance. This enables the deployment of faster, more reliable, and energy efficient wireless networks. Simultaneously, the rapidly expanding electric vehicle market urgently requires highly efficient and compact power electronics for onboard chargers, sophisticated inverters, and DC DC converters. GaN power devices offer substantial advantages over traditional silicon, providing smaller footprints, lighter weight components, and superior energy conversion efficiency, which translates directly to extended EV range and faster charging experiences. As both 5G component manufacturers and EV power module producers ramp up their output utilizing GaN technology, the demand for high purity, advanced GaN sputtering targets for precise film deposition is surging. This powerful dual driver establishes a robust and sustained demand trajectory for these crucial material inputs, fostering innovation and significant investment in target manufacturing capabilities.
High-Performance GaN Device Manufacturing Fueling Innovation in Target Material Purity and Size
The escalating global demand for high-performance Gallium Nitride GaN devices is profoundly reshaping the GaN target market, presenting a prime innovation opportunity. Advanced GaN applications in power electronics, RF, and optoelectronics require materials of exceptional quality. This critical need is driving intense focus on target material purity; ultra-pure GaN targets minimize device defects, enhance electron mobility, and ensure superior power efficiency and reliability. Consequently, manufacturers are investing heavily in innovative synthesis methods to achieve these stringent purity standards. Simultaneously, the rapid expansion of GaN device manufacturing, notably in regions like Asia Pacific, demands larger target sizes. Bigger targets facilitate the production of larger GaN wafers, which translates directly into increased manufacturing efficiency, higher device yields, and reduced per-unit costs. This dual imperative for both supreme purity and expanded dimensions offers a lucrative avenue for material science companies to develop and supply next-generation GaN targets, underpinning the continued advancement and broader adoption of GaN technology.
Global Gallium Nitride Target Market Segmentation Analysis
Key Market Segments
By Material Type
- •Gallium Nitride
- •Silicon Carbide
- •Gallium Arsenide
By Application
- •Power Electronics
- •LEDs
- •RF Devices
- •Optoelectronics
By End Use Industry
- •Consumer Electronics
- •Telecommunications
- •Automotive
- •Aerospace
By Form Factor
- •Sublimated
- •Epitaxial
- •Bulk
Segment Share By Material Type
Share, By Material Type, 2025 (%)
- Gallium Nitride
- Silicon Carbide
- Gallium Arsenide
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Why is Power Electronics dominating the Global Gallium Nitride Target Market by application?
Power Electronics holds the largest share due to Gallium Nitride's superior characteristics for high power density and efficiency. GaN targets enable the fabrication of components like power converters, inverters, and rectifiers that operate at higher frequencies and temperatures than traditional silicon based alternatives. This makes them ideal for electric vehicles, fast charging consumer electronics, and renewable energy systems, driving significant demand for high performance targets used in device manufacturing.
How do material type and form factor influence the Gallium Nitride Target Market?
Gallium Nitride as a material type is primarily sought for its intrinsic properties for advanced device fabrication, often requiring specific purity and crystalline structures. While other materials like Silicon Carbide and Gallium Arsenide also see use, GaN targets are essential for true GaN device growth. The form factor, whether sublimated, epitaxial, or bulk, is critical for achieving the desired film quality and cost efficiency in subsequent manufacturing steps. Epitaxial targets, for instance, are preferred for precise layer deposition, impacting device performance and yield.
Which end use industries are primarily driving the adoption of Gallium Nitride targets?
Consumer Electronics and Telecommunications are significant drivers for Gallium Nitride target adoption. In consumer electronics, GaN enables compact and efficient power adapters and charging solutions. For telecommunications, GaN based RF devices offer superior performance for 5G infrastructure and satellite communications due to their high power handling and frequency capabilities. The Automotive sector is also increasingly important, driven by the demand for efficient power management in electric vehicles and advanced driver assistance systems.
What Regulatory and Policy Factors Shape the Global Gallium Nitride Target Market
The global Gallium Nitride GaN target market navigates a multifaceted regulatory environment primarily influenced by international trade policies and environmental mandates. Export controls and tariffs enacted by major economic blocs significantly impact material sourcing and supply chain resilience for high purity GaN targets. Strict environmental regulations worldwide govern hazardous materials handling and energy efficiency during manufacturing processes, compelling industry towards sustainable production. Key regions including the United States, Europe, and Asia implement strategic industrial policies through subsidies and research funding to bolster domestic semiconductor material production, aiming to reduce external dependencies. These governmental incentives stimulate local investment but can intensify global trade competition. Intellectual property rights safeguarding advanced material synthesis and processing technologies are paramount, requiring robust patent protection. Emerging international standardization efforts for material purity and performance are crucial for ensuring consistency across diverse applications in power electronics and RF devices. Geopolitical dynamics often amplify supply chain vulnerabilities, spurring a focus on diversification and regional self sufficiency, directly affecting target manufacturers and end users globally. This intricate framework demands continuous compliance and strategic adaptation from all market participants.
What New Technologies are Shaping Global Gallium Nitride Target Market?
The Global Gallium Nitride target market is undergoing significant transformation driven by relentless innovation. Emerging technologies are centered on achieving ultra high purity GaN targets, critical for next generation power electronics, advanced 5G radio frequency devices, and efficient electric vehicle systems. Key innovations include the development of larger diameter targets, facilitating more cost effective production of bigger GaN wafers and scaling manufacturing processes. Enhanced material uniformity and precise stoichiometric control are paramount trends, directly addressing the need for superior film quality and optimized device performance. Furthermore, advanced doping strategies embedded within the target material are emerging, allowing for finely tuned electrical properties in deposited GaN layers. These advancements underscore a strong market growth potential, fueled by the insatiable demand for high performance, energy efficient GaN based solutions across diverse industries.
Global Gallium Nitride Target Market Regional Analysis
Global Gallium Nitride Target Market
Trends, by Region
Asia-Pacific Market
Revenue Share, 2025
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Dominant Region
Asia Pacific · 58.2% share
Asia Pacific firmly establishes itself as the dominant region in the Global Gallium Nitride Target Market, commanding a substantial 58.2% market share. This impressive lead is primarily fueled by the presence of key electronics manufacturing hubs and a robust semiconductor industry across the region. Countries like China, Japan, South Korea, and Taiwan are at the forefront of GaN technology adoption, driving demand for high purity GaN targets in applications such as 5G infrastructure, power electronics, and advanced displays. Significant investments in research and development coupled with government initiatives promoting domestic production further solidify Asia Pacific's unparalleled position and sustained growth trajectory within this specialized market.
Fastest Growing Region
Asia Pacific · 16.2% CAGR
Asia Pacific is poised to be the fastest growing region in the global Gallium Nitride GaN target market, projected to expand at an impressive CAGR of 16.2% from 2026 to 2035. This substantial growth is driven by several key factors. The region is experiencing a rapid expansion in its consumer electronics sector, with increasing demand for smartphones, laptops, and other devices utilizing GaN technology for enhanced performance and efficiency. Furthermore, significant investments in 5G infrastructure development across countries like China, India, and South Korea are fueling the need for GaN targets in advanced communication components. The burgeoning electric vehicle EV industry and the growing adoption of GaN in power electronics applications are also major contributors to this robust regional growth.
Top Countries Overview
The U.S. plays a significant role in the global gallium nitride (GaN) target market, primarily as a technology leader and consumer. While production centers heavily in Asia, American companies drive innovation in compound semiconductor materials and applications, including RF, power electronics, and optoelectronics. Demand for high-purity GaN targets in advanced manufacturing facilities across the U.S. continues to grow, supporting domestic technology development and defense applications.
China dominates the global gallium nitride (GaN) target market, driven by its booming domestic semiconductor industry and strategic government support. Chinese manufacturers are rapidly expanding capacity and enhancing product quality, challenging established foreign players. This self-sufficiency reduces reliance on imports, strengthens its position in advanced electronics, and fuels further innovation in GaN-based technologies.
India’s role in the global gallium nitride (GaN) target market is nascent but expanding. While domestic production is limited, India is increasingly important as a consumer and R&D hub for GaN-based technologies. The rising electronics manufacturing sector fuels demand for GaN power devices and RF components, indirectly driving future demand for high-purity GaN targets.
Impact of Geopolitical and Macroeconomic Factors
Geopolitical tensions, particularly involving the US and China, significantly impact gallium nitride target supply chains. Export controls on precursors and advanced manufacturing equipment, imposed by various nations, create bottlenecks and drive up production costs. Security concerns surrounding critical technology also incentivize localized production, potentially segmenting the market along geopolitical lines. Furthermore, resource nationalism regarding gallium extraction could disrupt raw material availability, affecting pricing and manufacturing stability.
Macroeconomic factors influence demand. Global economic slowdowns temper capital expenditure in semiconductor fabrication, impacting target sales. Conversely, robust growth in telecom, defense, and power electronics drives increased investment. Inflationary pressures across the supply chain, from energy to labor, elevate manufacturing costs for targets. Exchange rate fluctuations also play a role, making imports more or less expensive depending on currency strength, influencing regional competitiveness and sourcing strategies for these critical materials.
Recent Developments
- March 2025
Infineon Technologies announced a strategic partnership with a leading Asian semiconductor foundry to expand its GaN-on-SiC power device manufacturing capabilities. This collaboration aims to meet the surging demand for high-efficiency power solutions in electric vehicles and renewable energy sectors.
- January 2025
Cree (now Wolfspeed) unveiled its new generation of GaN-on-SiC HEMT (High Electron Mobility Transistor) products, specifically designed for 5G telecommunications infrastructure. These new targets offer enhanced power efficiency and linearity, crucial for next-generation base stations and communication systems.
- November 2024
Broadcom completed the acquisition of a specialized GaN materials science company, integrating its advanced epitaxy and substrate technology into Broadcom's existing RF and power semiconductor divisions. This move strengthens Broadcom's vertical integration and control over its GaN supply chain for wireless communication applications.
- August 2024
Rohm Semiconductor launched a new line of GaN power devices optimized for data center server power supplies and industrial motor drives. These devices offer significant reductions in power loss and component size, contributing to more energy-efficient and compact designs.
- April 2025
Texas Instruments announced a significant investment in expanding its internal GaN target manufacturing facilities in the United States, citing increased geopolitical risks and a desire for greater supply chain resilience. This strategic initiative aims to reduce reliance on external suppliers for critical GaN materials.
Key Players Analysis
The Global Gallium Nitride Target Market sees key players like Toshiba and Osram Opto Semiconductors leading in epitaxy and advanced material synthesis for high power and RF applications. Rohm Semiconductor and Infineon Technologies focus on wide bandgap semiconductors, driving power electronics and automotive sector growth through superior efficiency and thermal management. Hanergy Thin Film Power Group explores solar applications, while Skyworks Solutions and Broadcom leverage GaN for 5G infrastructure and high frequency communication devices. Cree and NXP Semiconductors innovate in GaN on SiC and GaN on Si technologies respectively, enhancing cost effectiveness and performance. Texas Instruments actively develops integrated GaN power solutions. Strategic initiatives involve R&D investments in larger diameter GaN wafers, improving manufacturing processes, and expanding into electric vehicles and renewable energy, fueled by demand for high power density and energy efficient solutions.
List of Key Companies:
- Toshiba
- Osram Opto Semiconductors
- Rohm Semiconductor
- Hanergy Thin Film Power Group
- Skyworks Solutions
- Infineon Technologies
- Cree
- NXP Semiconductors
- Broadcom
- Texas Instruments
- Sankey Semiconductor
- EpiGaN
- StMicroelectronics
- Mitsubishi Electric
- American Micro Devices
- Qorvo
Report Scope and Segmentation
| Report Component | Description |
|---|---|
| Market Size (2025) | USD 1.85 Billion |
| Forecast Value (2035) | USD 7.92 Billion |
| CAGR (2026-2035) | 14.2% |
| Base Year | 2025 |
| Historical Period | 2020-2025 |
| Forecast Period | 2026-2035 |
| Segments Covered |
|
| Regional Analysis |
|
Table of Contents:
List of Figures
List of Tables
Table 1: Global Gallium Nitride Target Market Revenue (USD billion) Forecast, by Material Type, 2020-2035
Table 2: Global Gallium Nitride Target Market Revenue (USD billion) Forecast, by Application, 2020-2035
Table 3: Global Gallium Nitride Target Market Revenue (USD billion) Forecast, by End Use Industry, 2020-2035
Table 4: Global Gallium Nitride Target Market Revenue (USD billion) Forecast, by Form Factor, 2020-2035
Table 5: Global Gallium Nitride Target Market Revenue (USD billion) Forecast, by Region, 2020-2035
Table 6: North America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Material Type, 2020-2035
Table 7: North America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Application, 2020-2035
Table 8: North America Gallium Nitride Target Market Revenue (USD billion) Forecast, by End Use Industry, 2020-2035
Table 9: North America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Form Factor, 2020-2035
Table 10: North America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Country, 2020-2035
Table 11: Europe Gallium Nitride Target Market Revenue (USD billion) Forecast, by Material Type, 2020-2035
Table 12: Europe Gallium Nitride Target Market Revenue (USD billion) Forecast, by Application, 2020-2035
Table 13: Europe Gallium Nitride Target Market Revenue (USD billion) Forecast, by End Use Industry, 2020-2035
Table 14: Europe Gallium Nitride Target Market Revenue (USD billion) Forecast, by Form Factor, 2020-2035
Table 15: Europe Gallium Nitride Target Market Revenue (USD billion) Forecast, by Country/ Sub-region, 2020-2035
Table 16: Asia Pacific Gallium Nitride Target Market Revenue (USD billion) Forecast, by Material Type, 2020-2035
Table 17: Asia Pacific Gallium Nitride Target Market Revenue (USD billion) Forecast, by Application, 2020-2035
Table 18: Asia Pacific Gallium Nitride Target Market Revenue (USD billion) Forecast, by End Use Industry, 2020-2035
Table 19: Asia Pacific Gallium Nitride Target Market Revenue (USD billion) Forecast, by Form Factor, 2020-2035
Table 20: Asia Pacific Gallium Nitride Target Market Revenue (USD billion) Forecast, by Country/ Sub-region, 2020-2035
Table 21: Latin America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Material Type, 2020-2035
Table 22: Latin America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Application, 2020-2035
Table 23: Latin America Gallium Nitride Target Market Revenue (USD billion) Forecast, by End Use Industry, 2020-2035
Table 24: Latin America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Form Factor, 2020-2035
Table 25: Latin America Gallium Nitride Target Market Revenue (USD billion) Forecast, by Country/ Sub-region, 2020-2035
Table 26: Middle East & Africa Gallium Nitride Target Market Revenue (USD billion) Forecast, by Material Type, 2020-2035
Table 27: Middle East & Africa Gallium Nitride Target Market Revenue (USD billion) Forecast, by Application, 2020-2035
Table 28: Middle East & Africa Gallium Nitride Target Market Revenue (USD billion) Forecast, by End Use Industry, 2020-2035
Table 29: Middle East & Africa Gallium Nitride Target Market Revenue (USD billion) Forecast, by Form Factor, 2020-2035
Table 30: Middle East & Africa Gallium Nitride Target Market Revenue (USD billion) Forecast, by Country/ Sub-region, 2020-2035